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TISP4070H3BJ THRU TISP4095H3BJ, TISP4125H3BJ THRU TISP4200H3BJ, TISP4240H3BJ THRU TISP4400H3BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
Copyright (c) 1999, Power Innovations Limited, UK NOVEMBER 1997 - REVISED MARCH 1999
TELECOMMUNICATION SYSTEM 100 A 10/1000 OVERVOLTAGE PROTECTORS
q q
8 kV 10/700, 200 A 5/310 ITU-T K20/21 rating Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge
DEVICE `4070 `4080 `4095 `4125 `4145 `4165 `4180 `4200 `4240 `4265 `4300 `4350 `4400 VDRM V 58 65 75 100 120 135 145 155 180 200 230 275 300 V(BO) V 70 80 95 125 145 165 180 200 240 265 300 350 400
SMBJ PACKAGE (TOP VIEW)
R(B) 1
2 T(A)
MDXXBG
device symbol
T
SD4XAA
R Terminals T and R correspond to the alternative line designators of A and B
q
Rated for International Surge Wave Shapes
WAVE SHAPE 2/10 s 8/20 s 10/160 s 10/700 s 10/560 s 10/1000 s STANDARD GR-1089-CORE IEC 61000-4-5 FCC Part 68 ITU-T K20/21 FCC Part 68 GR-1089-CORE ITSP A 500 300 250 200 160 100
q q
Low Differential Capacitance . . . 67 pF max. UL Recognized, E132482
description
These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used for the protection of 2-wire telecommunication equipment (e.g. between the Ring and Tip wires for telephones and modems). Combinations of devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground). The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the diverted current subsides.
PRODUCT
INFORMATION
1
Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters.
TISP4070H3BJ THRU TISP4095H3BJ, TISP4125H3BJ THRU TISP4200H3BJ, TISP4240H3BJ THRU TISP4400H3BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
NOVEMBER 1997 - REVISED MARCH 1999
This TISP4xxxH3BJ range consists of thirteen voltage variants to meet various maximum system voltage levels (58 V to 275 V). They are guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These high (H) current protection devices are in a plastic package SMBJ (JEDEC DO-214AA with J-bend leads) and supplied in embossed carrier reel pack. For alternative voltage and holding current values, consult the factory. For lower rated impulse currents in the SMB package, the 50 A 10/1000 TISP4xxxM3BJ series is available.
absolute maximum ratings, TA = 25C (unless otherwise noted)
RATING `4070 `4080 `4095 `4125 `4145 `4165 Repetitive peak off-state voltage, (see Note 1) `4180 `4200 `4240 `4265 `4300 `4350 `4400 Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4) 2/10 s (GR-1089-CORE, 2/10 s voltage wave shape) 8/20 s (IEC 61000-4-5, 1.2/50 s voltage, 8/20 current combination wave generator) 10/160 s (FCC Part 68, 10/160 s voltage wave shape) 5/200 s (VDE 0433, 10/700 s voltage wave shape) 0.2/310 s (I3124, 0.5/700 s voltage wave shape) 5/310 s (ITU-T K20/21, 10/700 s voltage wave shape) 5/310 s (FTZ R12, 10/700 s voltage wave shape) 10/560 s (FCC Part 68, 10/560 s voltage wave shape) 10/1000 s (GR-1089-CORE, 10/1000 s voltage wave shape) Non-repetitive peak on-state current (see Notes 2, 3 and 5) 20 ms (50 Hz) full sine wave 16.7 ms (60 Hz) full sine wave 1000 s 50 Hz/60 Hz a.c. Initial rate of rise of on-state current, Junction temperature Storage temperature range NOTES: 1. 2. 3. 4. 5. Exponential current ramp, Maximum ramp value < 200 A diT/dt TJ Tstg ITSM 55 60 2.1 400 -40 to +150 -65 to +150 A/s C C A ITSP 500 300 250 220 200 200 200 160 100 A VDRM SYMBOL VALUE 58 65 75 100 120 135 145 155 180 200 230 275 300 V UNIT
See Applications Information and Figure 10 for voltage values at lower temperatures. Initially the TISP4xxxH3BJ must be in thermal equilibrium with TJ = 25C. The surge may be repeated after the TISP4xxxH3BJ returns to its initial conditions. See Applications Information and Figure 11 for current ratings at other temperatures. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring track widths. See Figure 8 for the current ratings at other durations. Derate current values at -0.61 %/C for ambient temperatures above 25 C
PRODUCT
2
INFORMATION
TISP4070H3BJ THRU TISP4095H3BJ, TISP4125H3BJ THRU TISP4200H3BJ, TISP4240H3BJ THRU TISP4400H3BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
NOVEMBER 1997 - REVISED MARCH 1999
electrical characteristics for the T and R terminals, TA = 25C (unless otherwise noted)
PARAMETER IDRM Repetitive peak offstate current VD = VDRM TEST CONDITIONS TA = 25C TA = 85C `4070 `4080 `4095 `4125 `4145 `4165 V(BO) Breakover voltage dv/dt = 750 V/ms, RSOURCE = 300 `4180 `4200 `4240 `4265 `4300 `4350 `4400 `4070 `4080 `4095 `4125 dv/dt 1000 V/s, Linear voltage ramp, V(BO) Impulse breakover voltage Maximum ramp value = 500 V di/dt = 20 A/s, Linear current ramp, Maximum ramp value = 10 A `4145 `4165 `4180 `4200 `4240 `4265 `4300 `4350 `4400 I(BO) VT IH dv/dt ID Breakover current On-state voltage Holding current Critical rate of rise of off-state voltage Off-state current dv/dt = 750 V/ms, RSOURCE = 300 0.15 0.15 5 TA = 85C Vd = 1 V rms, VD = 0, `4070 thru `4095 `4125 thru `4200 `4240 thru `4400 f = 100 kHz, Vd = 1 V rms, VD = -1 V `4070 thru `4095 `4125 thru `4200 `4240 thru `4400 Coff Off-state capacitance f = 100 kHz, Vd = 1 V rms, VD = -2 V `4070 thru `4095 `4125 thru `4200 `4240 thru `4400 f = 100 kHz, Vd = 1 V rms, VD = -50 V `4070 thru `4095 `4125 thru `4200 `4240 thru `4400 f = 100 kHz, (see Note 6) NOTE 6: To avoid possible voltage clipping, the `4125 is tested with VD = -98 V. Vd = 1 V rms, VD = -100 V `4125 thru `4200 `4240 thru `4400 145 80 70 130 71 60 120 65 55 62 30 24 28 22 10 170 90 84 150 79 67 140 74 62 73 35 28 33 26 pF IT = 5 A, tW = 100 s IT = 5 A, di/dt = +/-30 mA/ms Linear voltage ramp, Maximum ramp value < 0.85VDRM VD = 50 V f = 100 kHz, MIN TYP MAX 5 10 70 80 95 125 145 165 180 200 240 265 300 350 400 78 88 103 134 154 174 189 210 250 276 311 362 413 0.6 3 0.6 A V A kV/s A V V UNIT A
PRODUCT
INFORMATION
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TISP4070H3BJ THRU TISP4095H3BJ, TISP4125H3BJ THRU TISP4200H3BJ, TISP4240H3BJ THRU TISP4400H3BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
NOVEMBER 1997 - REVISED MARCH 1999
thermal characteristics
PARAMETER TEST CONDITIONS EIA/JESD51-3 PCB, IT = ITSM(1000), RJA Junction to free air thermal resistance TA = 25 C, (see Note 7) 265 mm x 210 mm populated line card, 4-layer PCB, IT = ITSM(1000), TA = 25 C NOTE 50 MIN TYP MAX 113 C/W UNIT
7: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
PARAMETER MEASUREMENT INFORMATION
+i ITSP Quadrant I Switching Characteristic
ITSM IT VT IH
V(BO)
I(BO)
-v IDRM
VDRM
VD
ID ID VD VDRM
IDRM +v
I(BO)
IH
V(BO)
VT IT ITSM
Quadrant III Switching Characteristic ITSP -i
PMXXAAB
Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR T AND R TERMINALS ALL MEASUREMENTS ARE REFERENCED TO THE R TERMINAL
PRODUCT
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INFORMATION
TISP4070H3BJ THRU TISP4095H3BJ, TISP4125H3BJ THRU TISP4200H3BJ, TISP4240H3BJ THRU TISP4400H3BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
NOVEMBER 1997 - REVISED MARCH 1999
TYPICAL CHARACTERISTICS
OFF-STATE CURRENT vs JUNCTION TEMPERATURE
100 VD = 50 V Normalised Breakover Voltage 10 |ID| - Off-State Current - A
TCHAG
1.10
NORMALISED BREAKOVER VOLTAGE vs JUNCTION TEMPERATURE TC4HAF
1.05
1
0*1
1.00
0*01
0*001 -25 0 25 50 75 100 125 TJ - Junction Temperature - C 150
0.95 -25 0 25 50 75 100 125 TJ - Junction Temperature - C 150
Figure 2. ON-STATE CURRENT vs ON-STATE VOLTAGE
200 150 100 70 IT - On-State Current - A 50 40 30 20 15 10 7 5 4 3 2 1.5 1 0.7 '4125 THRU '4200 TA = 25 C tW = 100 s Normalised Holding Current
Figure 3. NORMALISED HOLDING CURRENT vs JUNCTION TEMPERATURE TC4HAD
TC4HAC
2.0
1.5
1.0 0.9 0.8 0.7 0.6 0.5 0.4
'4240 THRU '4400 1
'4070 THRU '4095 1.5 2 3 45 VT - On-State Voltage - V 7 10
-25
0 25 50 75 100 125 TJ - Junction Temperature - C
150
Figure 4.
Figure 5.
PRODUCT
INFORMATION
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TISP4070H3BJ THRU TISP4095H3BJ, TISP4125H3BJ THRU TISP4200H3BJ, TISP4240H3BJ THRU TISP4400H3BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
NOVEMBER 1997 - REVISED MARCH 1999
TYPICAL CHARACTERISTICS
NORMALISED CAPACITANCE vs OFF-STATE VOLTAGE
1 0.9 Capacitance Normalised to VD = 0 0.8 0.7 0.6 0.5 '4070 THRU '4095 0.4 TJ = 25C Vd = 1 Vrms
TC4HAB
DIFFERENTIAL OFF-STATE CAPACITANCE vs RATED REPETITIVE PEAK OFF-STATE VOLTAGE
75 '4070 '4080 '4095 '4125 '4145 '4165 '4180 '4200 '4240 '4265 C - Differential Off-State Capacitance - pF 70 65 60 55 50 45 40 35 30
TCHAE
C = Coff(-2 V) - Coff(-50 V)
0.3
'4125 THRU '4200 '4240 THRU '4400
0.2 0.5
1
2
3
5
10
20 30 50
100150
50
VD - Off-state Voltage - V
60 70 80 90100 150 200 250 300 VDRM - Repetitive Peak Off-State Voltage - V
Figure 6.
Figure 7.
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INFORMATION
'4300 '4350 '4400
TISP4070H3BJ THRU TISP4095H3BJ, TISP4125H3BJ THRU TISP4200H3BJ, TISP4240H3BJ THRU TISP4400H3BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
NOVEMBER 1997 - REVISED MARCH 1999
RATING AND THERMAL INFORMATION
NON-REPETITIVE PEAK ON-STATE CURRENT vs CURRENT DURATION
ITSM(t) - Non-Repetitive Peak On-State Current - A 30 VGEN = 600 Vrms, 50/60 Hz 20 15 10 9 8 7 6 5 4 3 2 1.5 0*1 1 10 100 1000 RGEN = 1.4*VGEN/ITSM(t) EIA/JESD51-2 ENVIRONMENT EIA/JESD51-3 PCB TA = 25 C
TI4HAC
THERMAL IMPEDANCE vs POWER DURATION
150 ZJA(t) - Transient Thermal Impedance - C/W 100 70 50 40 30 20 15 10 7 5 4 3 2 1.5 1 0*1 1 ITSM(t) APPLIED FOR TIME t EIA/JESD51-2 ENVIRONMENT EIA/JESD51-3 PCB TA = 25 C 10 t - Power Duration - s 100 1000
TI4HAE
t - Current Duration - s
Figure 8.
Figure 9. IMPULSE RATING vs AMBIENT TEMPERATURE
700 600 BELLCORE 2/10
VDRM DERATING FACTOR vs MINIMUM AMBIENT TEMPERATURE
1.00 0.99 0.98 Derating Factor 0.97 '4070 THRU '4095 0.96 0.95 '4125 THRU '4200 0.94 '4240 THRU '4440 0.93 -40 -35 -30 -25 -20 -15 -10 -5 0
TI4HAD
TC4HAA
500 400 Impulse Current - A 300 250 ITU-T 10/700 200 FCC 10/560 150 120 BELLCORE 10/1000 100 90 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 IEC 1.2/50, 8/20
FCC 10/160
5 10 15 20 25
TAMIN - Minimum Ambient Temperature - C
TA - Ambient Temperature - C
Figure 10.
Figure 11.
PRODUCT
INFORMATION
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TISP4070H3BJ THRU TISP4095H3BJ, TISP4125H3BJ THRU TISP4200H3BJ, TISP4240H3BJ THRU TISP4400H3BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
NOVEMBER 1997 - REVISED MARCH 1999
APPLICATIONS INFORMATION deployment
These devices are two terminal overvoltage protectors. They may be used either singly to limit the voltage between two conductors (Figure 12) or in multiples to limit the voltage at several points in a circuit (Figure 13).
Th3 Th1 Th1 Th2
Figure 12. TWO POINT PROTECTION
Figure 13. MULTI-POINT PROTECTION
In Figure 12, protector Th1 limits the maximum voltage between the two conductors to V(BO). This configuration is normally used to protect circuits without a ground reference, such as modems. In Figure 13, protectors Th2 and Th3 limit the maximum voltage between each conductor and ground to the V(BO) of the individual protector. Protector Th1 limits the maximum voltage between the two conductors to its V(BO) value. If the equipment being protected has all its vulnerable components connected between the conductors and ground, then protector Th1 is not required.
impulse testing
To verify the withstand capability and safety of the equipment, standards require that the equipment is tested with various impulse wave forms. The table below shows some common values.
PEAK VOLTAGE STANDARD SETTING V GR-1089-CORE 2500 1000 1500 FCC Part 68 (March 1998) I3124 ITU-T K20/K21 800 1500 1000 1500 1500 4000 VOLTAGE WAVE FORM s 2/10 10/1000 10/160 10/560 9/720 9/720 0.5/700 10/700 PEAK CURRENT VALUE A 500 100 200 100 37.5 25 37.5 37.5 100 CURRENT WAVE FORM s 2/10 10/1000 10/160 10/560 5/320 5/320 0.2/310 5/310 TISP4xxxH3 25 C RATING A 500 100 250 160 200 200 200 200 SERIES RESISTANCE 0 0 0 0 0 0 0
FCC Part 68 terminology for the waveforms produced by the ITU-T recommendation K21 10/700 impulse generator
If the impulse generator current exceeds the protectors current rating then a series resistance can be used to reduce the current to the protectors rated value and so prevent possible failure. The required value of series resistance for a given waveform is given by the following calculations. First, the minimum total circuit impedance is found by dividing the impulse generators peak voltage by the protectors rated current. The impulse generators fictive impedance (generators peak voltage divided by peak short circuit current) is then subtracted from the minimum total circuit impedance to give the required value of series resistance. In some cases the equipment will require verification over a temperature range. By using the rated waveform values from Figure 11, the appropriate series resistor value can be calculated for ambient temperatures in the range of -40 C to 85 C.
PRODUCT
8
INFORMATION
TISP4070H3BJ THRU TISP4095H3BJ, TISP4125H3BJ THRU TISP4200H3BJ, TISP4240H3BJ THRU TISP4400H3BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
NOVEMBER 1997 - REVISED MARCH 1999
a.c. power testing
The protector can withstand currents applied for times not exceeding those shown in Figure 8. Currents that exceed these times must be terminated or reduced to avoid protector failure. Fuses, PTC (Positive Temperature Coefficient) resistors and fusible resistors are overcurrent protection devices which can be used to reduce the current flow. Protective fuses may range from a few hundred milliamperes to one ampere. In some cases it may be necessary to add some extra series resistance to prevent the fuse opening during impulse testing. The current versus time characteristic of the overcurrent protector must be below the line shown in Figure 8. In some cases there may be a further time limit imposed by the test standard (e.g. UL 1459 wiring simulator failure).
capacitance
The protector characteristic off-state capacitance values are given for d.c. bias voltage, VD, values of 0, -1 V, -2 V and -50 V. Where possible values are also given for -100 V. Values for other voltages may be calculated by multiplying the VD = 0 capacitance value by the factor given in Figure 6. Up to 10 MHz the capacitance is essentially independent of frequency. Above 10 MHz the effective capacitance is strongly dependent on connection inductance. In many applications, such as Figure 15 and Figure 17, the typical conductor bias voltages will be about -2 V and -50 V. Figure 7 shows the differential (line unbalance) capacitance caused by biasing one protector at -2 V and the other at -50 V.
normal system voltage levels
The protector should not clip or limit the voltages that occur in normal system operation. For unusual conditions, such as ringing without the line connected, some degree of clipping is permissible. Under this condition about 10 V of clipping is normally possible without activating the ring trip circuit. Figure 10 allows the calculation of the protector VDRM value at temperatures below 25 C. The calculated value should not be less than the maximum normal system voltages. The TISP4265H3BJ, with a VDRM of 200 V, can be used for the protection of ring generators producing 100 V rms of ring on a battery voltage of -58 V (Th2 and Th3 in Figure 17). The peak ring voltage will be 58 + 1.414*100 = 199.4 V. However, this is the open circuit voltage and the connection of the line and its equipment will reduce the peak voltage. In the extreme case of an unconnected line, clipping the peak voltage to 190 V should not activate the ring trip. This level of clipping would occur at the temperature when the VDRM has reduced to 190/200 = 0.95 of its 25 C value. Figure 10 shows that this condition will occur at an ambient temperature of -22 C. In this example, the TISP4265H3BJ will allow normal equipment operation provided that the minimum expected ambient temperature does not fall below -22 C.
JESD51 thermal measurement method
To standardise thermal measurements, the EIA (Electronic Industries Alliance) has created the JESD51 standard. Part 2 of the standard (JESD51-2, 1995) describes the test environment. This is a 0.0283 m3 (1 ft3) cube which contains the test PCB (Printed Circuit Board) horizontally mounted at the centre. Part 3 of the standard (JESD51-3, 1996) defines two test PCBs for surface mount components; one for packages smaller than 27 mm on a side and the other for packages up to 48 mm. The SMBJ measurements used the smaller 76.2 mm x 114.3 mm (3.0 " x 4.5 ") PCB. The JESD51-3 PCBs are designed to have low effective thermal conductivity (high thermal resistance) and represent a worse case condition. The PCBs used in the majority of applications will achieve lower values of thermal resistance and so can dissipate higher power levels than indicated by the JESD51 values.
PRODUCT
INFORMATION
9
TISP4070H3BJ THRU TISP4095H3BJ, TISP4125H3BJ THRU TISP4200H3BJ, TISP4240H3BJ THRU TISP4400H3BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
NOVEMBER 1997 - REVISED MARCH 1999
typical circuits
MODEM RING FUSE RING DETECTOR HOOK SWITCH TISP4350 TIP AI6XBMA D.C. SINK SIGNAL RING WIRE Th1 Th2 R1b AI6XBK E.G. LINE CARD TIP WIRE
R1a Th3 PROTECTED EQUIPMENT
Figure 14. MODEM INTER-WIRE PROTECTION
Figure 15. PROTECTION MODULE
R1a Th3 Th1 Th2 R1b AI6XBL D.C. SIGNAL
Figure 16. ISDN PROTECTION
OVERCURRENT PROTECTION TIP WIRE R1a
RING/TEST PROTECTION
TEST RELAY
RING RELAY
SLIC RELAY S3a
SLIC PROTECTION
Th4
Th3 Th1 Th2 RING WIRE R1b
S1a
S2a SLIC
Th5 S3b S1b S2b
TISP6xxxx, TISPPBLx, 1/2TISP6NTP2 C1 220 nF VBAT
TEST EQUIPMENT
RING GENERATOR
AI6XBJ
Figure 17. LINE CARD RING/TEST PROTECTION
PRODUCT
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INFORMATION
TISP4070H3BJ THRU TISP4095H3BJ, TISP4125H3BJ THRU TISP4200H3BJ, TISP4240H3BJ THRU TISP4400H3BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
NOVEMBER 1997 - REVISED MARCH 1999
MECHANICAL DATA SMBJ (DO-214AA) plastic surface mount diode package
This surface mount package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.
SMB 4,57 4,06
3,94 3,30
2
Index Mark (if needed)
2,40 2,00
1,52 0,76
2,10 1,90 5,59 5,21
0,20 0,10
2,32 1,96
ALL LINEAR DIMENSIONS IN MILLIMETERS
MDXXBHA
PRODUCT
INFORMATION
11
TISP4070H3BJ THRU TISP4095H3BJ, TISP4125H3BJ THRU TISP4200H3BJ, TISP4240H3BJ THRU TISP4400H3BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
NOVEMBER 1997 - REVISED MARCH 1999
MECHANICAL DATA recommended printed wiring footprint.
SMB Pad Size 2.54
2.40
2.16 ALL LINEAR DIMENSIONS IN MILLIMETERS
MDXXBI
device symbolization code
Devices will be coded as below. As the device parameters are symmetrical, terminal 1 is not identified.
DEVICE TISP4070H3BJ TISP4080H3BJ TISP4095H3BJ TISP4125H3BJ TISP4145H3BJ TISP4165H3BJ TISP4180H3BJ TISP4200H3BJ TISP4240H3BJ TISP4265H3BJ TISP4300H3BJ TISP4350H3BJ TISP4400H3BJ SYMOBLIZATION CODE 4070H3 4080H3 4095H3 4125H3 4145H3 4165H3 4180H3 4200H3 4240H3 4265H3 4300H3 4350H3 4400H3
carrier information
Devices are shipped in one of the carriers below. Unless a specific method of shipment is specified by the customer, devices will be shipped in the most practical carrier. For production quantities the carrier will be embossed tape reel pack. Evaluation quantities may be shipped in bulk pack or embossed tape.
CARRIER Embossed Tape Reel Pack Bulk Pack ORDER # TISP4xxxH3BJR TISP4xxxH3BJ
PRODUCT
12
INFORMATION
TISP4070H3BJ THRU TISP4095H3BJ, TISP4125H3BJ THRU TISP4200H3BJ, TISP4240H3BJ THRU TISP4400H3BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
NOVEMBER 1997 - REVISED MARCH 1999
MECHANICAL DATA tape dimensions
SMB Package Single-Sprocket Tape
4,10 3,90 2,05 1,95
1,65 1,55 1,85 1,65 0,40 MAX.
5,55 5,45
12,30 11,70
8,20 MAX.
8,10 7,90 Direction of Feed
o 1,5 MIN. Carrier Tape Embossment 20
0 MIN.
Cover Tape 4,5 MAX.
Maximium component rotation
Index Mark (if needed)
Typical component cavity centre line Typical component centre line
ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The clearance between the component and the cavity must be within 0,05 mm MIN. to 0,65 mm MAX. so that the component cannot rotate more than 20 within the determined cavity. B. Taped devices are supplied on a reel of the following dimensions:Reel diameter: 330 3,0 mm Reel hub diameter 75 mm MIN. Reel axial hole: 13,0 0,5 mm C. 3000 devices are on a reel. MDXXBJ
PRODUCT
INFORMATION
13
TISP4070H3BJ THRU TISP4095H3BJ, TISP4125H3BJ THRU TISP4200H3BJ, TISP4240H3BJ THRU TISP4400H3BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
NOVEMBER 1997 - REVISED MARCH 1999
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements. PI assumes no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORISED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright (c) 1999, Power Innovations Limited
PRODUCT
14
INFORMATION

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